TOPAS 3.6
A non-linear transistor model for the simulation of any FET-type structure
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TOPAS - TransistOr Parameter Scaleable model is a high precision non-linear transistor model for the simulation of any FET-type structure based upon different material systems such as GaAs, InP or even Si. Due to the special kind of equivalent element circuitry small signal circuit elements are optimized without changing the perfect agreement of static simulations compared to measurements.
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